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CT90AM-18 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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CT90AM-18 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 3 page ![]() MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR Sep. 2000 MITSUBISHI Nch IGBT CT90AM-18 INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS (Tc = 25 °C) CT90AM-18 OUTLINE DRAWING Dimensions in mm TO-3PL q VCES ............................................................................... 900V q IC .........................................................................................60A q Simple drive q Integrated Fast-recovery diode q Small tail loss q Low VCE Saturation Voltage 20MAX. 5 2 2 1 0.5 4.0 φ3.2 5.45 5.45 3 GATE COLLECTOR EMITTER COLLECTOR APPLICATION Microwave oven, Electoromagnetic cooking devices, Rice-cookers 900 ±25 ±30 60 120 40 250 –40 ~ +150 –40 ~ +150 VGE = 0V Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulsed) Emitter current Maximum power dissipation Junction temperature Storage temperature V V V A A A W °C °C VCES VGES VGEM IC ICM IE PC Tj Tstg Symbol Parameter Conditions Ratings Unit |
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