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STW34NB20 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW34NB20 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STW34NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.062 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s HIGH CURRENT, HIGH SPEED SWITCHING INTERNAL SCHEMATIC DIAGRAM January 1998 1 2 3 TO-247 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Volt age (VGS =0) 200 V VDGR Drain- gate Voltage (RGS =20 k Ω) 200 V VGS Gat e-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 o C34 A ID Drain Current (continuous) at Tc =100 oC21 A IDM( •) Drain Current (pulsed) 136 A Ptot Tot al Dissipation at Tc =25 oC180 W Derating F act or 1.44 W/ oC Tstg Storage T emperat ure -65 to 150 oC Tj Max. O perating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1)ISD ≤34A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STW 34NB20 200 V < 0.075 Ω 34 A 1/8 |
Similar Part No. - STW34NB20 |
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Similar Description - STW34NB20 |
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