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STW5NA90 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW5NA90
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW5NA90 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on Time
Rise Time
VDD =450 V
ID =
2. 5 A
RG =4.7
Ω
VGS =10 V
13
12
20
19
ns
ns
(di/ dt )on
Turn-on Current Slope
VDD =720 V
ID =5 A
RG =47
Ω
VGS =10 V
250
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =720 V
ID =5 A
VGS =10 V
60
10
26
80
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =720 V
ID =5A
RG =4.7
Ω
VGS =10 V
15
7
25
25
14
40
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
5.3
21.3
A
A
VSD (
∗)
Forward On Voltage
ISD =5.3 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 5 A
di/dt = 100 A/
µs
VDD =30 V
Tj =150
oC
1150
17. 3
30
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
STW5NA90-STH5NA90FI
3/6



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