STW6NA90 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	STW6NA90

Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STW6NA90

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.45

Ω

s

± 30V GATE TO SOURCE VOLTAGE

RANTING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCE

s

GATE CHARGE MINIMIZED

s

REDUCED VOLTAGE SPREAD

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLY (SMPS)

s

CONSUMER AND INDUSTRIAL LIGHTING

s

DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY (UPS)

INTERNAL SCHEMATIC DIAGRAM

January 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

900

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC6

A

ID

Drain Current (continuous) at Tc = 100

oC

3.8

A

IDM(

•)

Drain Current (pulsed)

24

A

Ptot

Total Dissipation at Tc = 25

oC

160

W

Derating Factor

1.28

W/

oC

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW6NA90

900 V

< 1.9

Ω

6 A

TO-247

1

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3

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