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STW6NB100 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW6NB100 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STW6NB100 N - CHANNEL 1000V - 2.3 Ω - 5.4A - TO-247 PowerMESH ™ MOSFET s TYPICAL RDS(on) = 2.3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage technology, STMicroelectronics has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM October 1999 1 2 3 TO-247 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Un it VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain- gat e Voltage (RGS =20 k Ω) 1000 V VGS G ate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC 5.4 A ID Drain Current (continuous) at Tc = 100 oC 3.4 A IDM( •) Drain Current (pulsed) 21 A Ptot T otal Dissipat ion at Tc =25 oC160 W Derating F act or 1.28 W / o C dv/dt( 1) Peak Diode Recovery voltage slope 4 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. O perating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 5.4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STW 6NB100 1000 V < 2.8 Ω 5. 4 A 1/8 |
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