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STW7NA100 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW7NA100
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW7NA100 Datasheet(HTML) 1 Page - STMicroelectronics

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STW7NA100
STH7NA100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
s
TYPICAL RDS(on) = 1.45
Ω
s
± 30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
GATE CHARGE MINIMISED
s
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW7NA100
STH7NA100FI
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)
1000
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25
oC
7
4.3
A
ID
Drain Current (continuous) at Tc = 100
oC
4.4
2.7
A
IDM(
•)
Drain Current (pulsed)
28
28
A
Ptot
Total Dissipation at Tc = 25
oC
190
70
W
Derating Factor
1.52
0.56
W/
oC
VISO
Insulation Withstand Voltage (DC)
4000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STW7NA100
STH7NA100FI
1000 V
1000 V
< 1.7
Ω
< 1.7
Ω
7 A
4.3 A
March 1998
TO-247
ISOWATT218
1
2
3
1
2
3
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