STW7NA80 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Time

Rise Time

VDD =400 V

ID = 3.5 A

RG =47

Ω

VGS =10 V

(see t est circuit, f igure 3)

3.5

9.5

125

(di/dt)on

Turn-on Current Slope

VDD =640 V

ID =7 A

RG =47

Ω

VGS =10 V

(see t est circuit, figure 5)

170

µs

Q gs

Qgd

Tot al G ate Charge

Gat e-Source Charge

Gat e-Drain Charge

VDD = 640 V

ID =7 A

VGS =10 V

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off -volt age Rise T ime

Fall T ime

Cross-over Time

VDD =640 V

ID =6 A

RG =47

Ω VGS =10 V

(see t est circuit, f igure 5)

125

120

165

SOURCE DRAIN DIODE

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ISD

ISDM (

•)

Source-drain Current

(pulsed)

6. 5

VSD (

∗)Forward On Voltage

ISD =7 A

VGS =0

1. 6

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =7 A

di/dt = 100 A/

µs

VDD = 100 V

Tj =150

(see t est circuit, f igure 5)

850

µC

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area for TO-247

Safe Operating Area for ISOWATT218

STW7NA80-STH7NA80FI

3/10

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