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STW8NA60 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW8NA60
Description  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW8NA60 Datasheet(HTML) 1 Page - STMicroelectronics

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STW8NA60
STH8NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.92
Ω
s
± 30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Unit
ST W8NA60
STH8NA60FI
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)
600
V
VGS
G ate-source Volt age
± 30
V
ID
Drain Current (continuous) at Tc =25
oC8
5
A
ID
Drain Current (continuous) at Tc =100
oC5.1
3.2
A
IDM (
•)
Drain Current (pulsed)
32
32
A
Ptot
T otal Dissipat ion at Tc =25
oC
150
60
W
Derating Factor
1.2
0. 48
W /
oC
VISO
I nsulation W ithstand Voltage (DC)
4000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STW 8NA60
STH8NA60F I
600 V
600 V
< 1
Ω
< 1
Ω
8A
5A
October 1998
TO-247
ISOWATT218
1
2
3
1
2
3
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