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STW8NB100 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW8NB100 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STW8NB100 N - CHANNEL 1000V - 1.2 Ω - 8A - TO-247 PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 1.2 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstand- ing performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 1000 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC8 A ID Drain Current (continuous) at Tc = 100 oC5 A IDM( •) Drain Current (pulsed) 32 A Ptot Total Dissipation at Tc = 25 oC 190 W Derating Factor 1.52 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 4 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area (1) ISD ≤8 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPE VDSS RDS(on) ID STW8NB100 1000 V < 1.5 Ω 8 A March 1999 TO-247 1 2 3 1/5 |
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