STH8NB90 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STH8NB90

Description	N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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July 2001

STW8NB90

STH8NB90FI

N-CHANNEL 900V - 1.1

Ω - 8 A TO-247/ISOWATT218

PowerMesh™ MOSFET

s

TYPICAL RDS(on) = 1.1 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(1)ISD ≤8 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

TYPE

VDSS

RDS(on)

ID

STW8NB90

900 V

< 1.45

Ω

8 A

STH8NB90FI

900 V

< 1.45

Ω

5 A

Symbol

Parameter

Value

Unit

STW8NB90

STH8NB90FI

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

900

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

85

A

ID

Drain Current (continuos) at TC = 100°C

53

A

IDM (q)

Drain Current (pulsed)

32

20

A

PTOT

Total Dissipation at TC = 25°C

200

80

W

Derating Factor

1.6

0.64

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

INTERNAL SCHEMATIC DIAGRAM

1

2

3

1

2

3

TO-247

ISOWATT218

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