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STH9NA80 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STH9NA80
Description  N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH9NA80 Datasheet(HTML) 1 Page - STMicroelectronics

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STW9NA80
STH9NA80FI
N - CHANNEL 800V - 0.85
Ω - 9.1A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.85
Ω
s
± 30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
ST W9NA80
STH9NA80F I
VDS
Drain-source Voltage (VGS =0)
800
V
VDGR
Drain- gate Volt age (RGS =20 k
Ω)
800
V
VGS
G ate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc =25
oC9.1
5.9
A
ID
Drain Current (continuous) at Tc =100
oC6
3.9
A
IDM (
•)
Drain Current (pulsed)
36.4
36.4
A
Ptot
T otal Dissipation at Tc =25
oC
190
80
W
Derating Factor
1.52
0.64
W /
o C
VISO
I nsulat ion W ithstand Voltage (DC)
4000
V
Tstg
Storage Temperat ure
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STW 9NA80
STH9NA80FI
800 V
800 V
<1.0
Ω
<1.0
Ω
9. 1 A
5. 9 A
November 1998
1
2
3
TO-247
ISOWATT218
1
2
3
1/10


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