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H8S2319 Datasheet(PDF) 13 Page - Renesas Technology Corp

Part # H8S2319
Description  16-Bit Single-Chip Microcomputer H8S Family/H8S/2300 Series
PDF  1144 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H8S2319 Datasheet(HTML) 13 Page - Renesas Technology Corp

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Rev.7.00 Feb. 14, 2007 page xiii of xxxii
REJ09B0089-0700
Item
Page
Revision (See Manual for Details)
20.2.6 Flash
Memory
Characteristics
Table 20.19 Flash
Memory
Characteristics
848
"
⎯Preliminary⎯" deleted from table 20.19
20.1 Electrical
Characteristics of
Mask ROM Version
(H8S/2319,
H8S/2318,
H8S/2317S,
H8S/2316S,
H8S/2315, H8S/2314)
and ROMless Version
(H8S/2312S)
817
Section 20.1 title amended
20.2.6 Flash Memory
Characteristics
Table 20.19 Flash
Memory
Characteristics
849
Table 20.19 amended
Item
Symbol
Min
Typ
Max
Unit
Test
Conditions
Programming time*
1 *2 *4
tP —
10
200
ms/
128 bytes
Erase time*
1 *3 *6
tE —
50
1000
ms/block
Reprogramming count
NWEC
100*
7
10000*
8 —
Times
Data retention time*
9
tDRP
10
—
—
Years
Programming Wait time after SWE bit setting*
1
x
1
—
—
μs
850
Notes 7 to 9 added
Notes: 7. Minimum number of times for which all characteristics
are guaranteed after rewriting (Guarantee range is 1 to
minimum value).
8. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
9. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
20.3.2 DC
Characteristics
Table 20.21 DC
Characteristics
853
Table 20.21 amended
VCC start voltage*
5
VCCSTART —
—
0.4
V
VCC rising edge*
5
SVCC
—
—
10
ms/V
Item
Symbol
Min
Typ
MaxU
nit
Test
Conditions
Note 5 added
Note: 5. Applies on condition that the
RES pin is low level at
power on.



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