HD6432142 datasheet(859/1177 Pages) RENESAS

859 / 1177 page

Section 26 Electrical Characteristics

Rev. 4.00 Sep 27, 2006 page 815 of 1130

REJ09B0327-0400

4. In the H8S/2148 Group, P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull outputs.

An external pull-up resistor is necessary to provide high-level output from SCL0 and

SDA0 (ICE = 1).

In the H8S/2148 Group, P52/SCK0 and P97 (ICE = 0) high levels are driven by NMOS.

5. When IICS = 0, ICE = 0, and KBIOE = 0. Low-level output when the bus drive function

is selected is determined separately.

6. The upper limit of the port 6 applied voltage is V

CC +0.3 V when CIN input is not

selected, and the lower of V

CC +0.3 V and AVCC +0.3 V when CIN input is selected.

When a pin is in output mode, the output voltage is equivalent to the applied voltage.

7. The upper limit of the port A applied voltage is V

CCB +0.3 V when CIN input is not

selected, and the lower of V

CCB +0.3 V and AVCC +0.3 V when CIN input is selected.

When a pin is in output mode, the output voltage is equivalent to the applied voltage.

8. The port A characteristics depend on V

CCB, and the other pins characteristics depend

on V

CC.

9. Current dissipation values are for V

IH min = VCC –0.2 V, VCCB –0.2 V, and VIL max =

0.2 V with all output pins unloaded and the on-chip pull-up MOSs in the off state.

10. The values are for V

RAM ≤ VCC < 2.7 V, VIH min = VCC –0.2 V, VCCB –0.2 V, and VIL max =

0.2 V.

11. For flash memory program/erase operations, the applicable ranges are V

CC = 3.0 V to

3.6 V.

HD6432142 Datasheet(PDF) 859 Page - Renesas Technology Corp