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HD6432142 Datasheet(PDF) 933 Page - Renesas Technology Corp |
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HD6432142 Datasheet(HTML) 933 Page - Renesas Technology Corp |
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933 / 1177 page ![]() Section 26 Electrical Characteristics Rev. 4.00 Sep 27, 2006 page 889 of 1130 REJ09B0327-0400 Item Symbol Min Typ Max Unit Test Conditions RES I in — — 10.0 µA Input leakage current STBY, NMI, MD1, MD0 —— 1.0 µA V in = 0.5 to V CC –0.5 V Port 7 — — 1.0 µA V in = 0.5 to AV CC –0.5 V Three-state leakage current (off state) Ports 1 to 6, 8, 9, A, B I TSI —— 1.0 µA V in = 0.5 to V CC –0.5 V Ports 1 to 3 –I P 30 — 300 µA V in = 0 V Input pull-up MOS current Ports 6, A, B 60 — 600 µA RES (4) C in — — 80 pF Input capacitance NMI — — 50 pF P52, P97, P42, P86 PA7 to PA2 — — 20 pF V in = 0 V, f = 1 MHz, T a = 25°C Input pins except (4) above — — 15 pF Normal operation I CC — 55 70 mA f = 20 MHz Current dissipation* 6 Sleep mode — 36 55 mA Standby mode* 7 —1.0 5.0 µA T a ≤ 50°C — — 20.0 µA 50°C < T a During A/D, D/A conversion Al CC —1.2 2.0 mA Analog power supply current Idle — 0.01 5.0 µA AV CC= 2.0 V to 5.5 V During A/D conversion Al ref —0.5 1.0 mA During A/D, D/A conversion —2.0 5.0 mA Reference power supply current Idle — 0.01 5.0 µA AV ref= 2.0 V to AV CC |
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