STW9NC80Z datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STW9NC80Z

Description	N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH™ II MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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September 2002

STW9NC80Z

N-CHANNEL 800V - 0.82

Ω - 9.4A TO-247

Zener-Protected PowerMESH™III MOSFET

(1)ISD ≤9.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

n

TYPICAL RDS(on) = 0.82Ω

n

EXTREMELY HIGH dv/dt CAPABILITY

n

GATE-TO-SOURCE ZENER DIODES

n

100% AVALANCHE TESTED

n

VERY LOW INTRINSIC CAPACITANCES

n

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

n

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

n

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW9NC80Z

800 V

<0.9

Ω

9.4 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

800

V

VGS

Gate- source Voltage

±25

V

ID

Drain Current (continuous) at TC = 25°C

9.4

A

ID

Drain Current (continuous) at TC = 100°C

5.9

A

IDM (1)

Drain Current (pulsed)

38

A

PTOT

Total Dissipation at TC = 25°C

190

W

Derating Factor

1.52

W/°C

IGS

Gate-source Current

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

4KV

dv/dt(q)

Peak Diode Recovery voltage slope

3

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-247

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