STX715 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

44.6

139

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 140 V

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 80 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 100 mA

IB = 10 mA

IC = 1 A

IB = 100 mA

0.25

0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 100 mA

IB = 10 mA

IC = 1 A

IB = 100 mA

1.1

hFE

∗

DC Current Gain

IC = 100 mA

VCE = 2 V

IC = 500 mA

VCE = 2 V

IC = 1 A

VCE = 2 V

140

Transition Frequency

IC = 0.1 A

VCE = 10 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

STX715

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