STY30NA50 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Rthc-si nk

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-Heatsink

Typ

with Conductive Grease

0.42

0.05

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current , Repet itive or Not -Repetitive

(pulse widt h limited by Tj max,

δ <1%)

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

3000

EAR

Repetit ive Avalanche Energy

(pulse widt h limited by Tj max,

δ <1%)

180

IAR

Avalanche Current , Repet itive or Not -Repetitive

(Tc =100

oC, pulse width limited by Tj max,

δ <1%)

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID = 250

µAVGS = 0

500

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating x0. 8

Tc = 125

200

1000

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate T hreshold Voltage VDS =VGS

ID =250

µA2.25

3.75

RDS(on)

St atic Drain-source On

Resistance

VGS =10 V

ID =15 A

VGS =10 V

ID =15 A

Tc =100

0. 15

0. 175

0.35

Ω

ID(o n)

On Stat e Drain Current

VDS >ID(on) xRDS(on) max

VGS =10 V

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on) max

ID =15 A

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

6150

780

220

8000

1000

290

STY30NA50

2/4

STY30NA50 Datasheet(PDF) 2 Page - STMicroelectronics

STY30NA50 Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4

Datasheet Download

Link URL