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STY34NB50F Datasheet(PDF) 3 Page - STMicroelectronics

Part # STY34NB50F
Description  N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY34NB50F Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 250 V
I D =17 A
RG =4.7
Ω
VGS =15 V
(see test circuit, figure 3)
45
35
ns
ns
Qg
Q gs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 400 V ID =34 A VGS =10 V
140
38
61
196
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 400 V
ID =17 A
RG =4.7
Ω
VGS =15 V
(see test circuit, figure 5)
28
30
60
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
34
136
A
A
VSD (
∗)
Forward On Volt age
ISD =34 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 34A
di/ dt = 100A/
µs
VDD = 100 V
Tj =150
o C
(see test circuit, figure 5)
715
11.8
33
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STY34NB50F
3/8



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