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STY60NA20 Datasheet(PDF) 1 Page - STMicroelectronics |
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STY60NA20 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STY60NA20 N - CHANNEL 200V - 0.030 Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA s TYPICAL RDS(on) = 0.030 Ω s EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP s ± 30V GATE TO SOURCE VOLTAGE RATING s REPETITIVE AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION T he Max247 TM package is a new high volume power package exibiting the same footprint as the industr y st andard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as T O-264. The increased die capacit y makes t he device ideal to reduce component count in mult iple paralleled designs and save board space with respect to larger packages. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ® INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STY60NA20 200 V < 0. 032 Ω 60 A August 1998 1 2 3 Max247 TM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VDS Drain-source Volt age (VGS = 0) 200 V VDGR Drain- gat e Volt age (RGS =20 k Ω) 200 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC60 A ID Drain Current (continuous) at Tc =100 oC40 A IDM( •) Drain Current (pulsed) 240 A Ptot Total Dissipation at Tc =25 oC 300 W Derat ing Factor 2.4 W/ oC Tstg St orage Temperature -65 to 150 oC Tj Max. Operating Junction T emperature 150 oC ( •) Pulse width limited by safe operating area 1/4 |
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