STF4LNK60Z datasheet(4/11 Pages) STMICROELECTRONICS

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Electrical characteristics

STD4LNK60Z - STF4LNK60Z

4/11

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 30 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 50 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 2.7 A

2.2

2.7

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

400

Coss eq.

Equivalent output

capacitance

VDS = 0 to 480 V, VGS =0

44.4

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 480 V, ID = 3.3 A

VGS = 10 V

(see Figure 3)

TBD

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

Rise time

VDD= 300 V, ID= 3.3 A,

RG=4.7 Ω, VGS=10 V

(see Figure 2)

7.5

19.5

td(off)

Turn-off delay time

Fall time

VDD=300 V, ID= 3.3 A,

RG=4.7 Ω, VGS= 10 V

(see Figure 2)

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