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EDF1AS Datasheet(PDF) 1 Page - Vishay Siliconix

Part # EDF1AS
Description  Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifiers
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

EDF1AS Datasheet(HTML) 1 Page - Vishay Siliconix

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New Product
EDF1AS thru EDF1DS
Vishay General Semiconductor
Document Number: 88578
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• Ultrafast reverse recovery time for high
frequency
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
MECHANICAL DATA
Case: DFS
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV)
1 A
VRRM
50 V to 200 V
IFSM
50 A
IR
5 µA
VF
1.05 V
trr
50 ns
TJ max.
150 °C
Case Style DFS
~
~
~
~
Note:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AS
EDF1BS
EDF1CS
EDF1DS
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
106
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward output rectified
current at TA = 40 °C
(1)
IF(AV)
1.0
A
Peak forward surge current single half sine-wave
superimposed on rated load
IFSM
50
A
Rating for fusing (t < 8.3 ms)
I2t
10
A2s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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