ES2F & ES2G

Vishay General Semiconductor

Document Number: 88588

Revision: 20-Nov-07

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 4. Typical Reverse Leakage Characteristics

T

T

T

T

100

10

1

0.1

0.01

Instantaneous Forward Voltage (V)

0.2

0.4

0.6

0.8

1

1.2

1.4

T

T

T

T

Percent of Rated Peak Reverse Voltage (%)

020

40

60

80

100

1000

100

10

1

0.1

Figure 5. Reverse Switching Characteristics

Figure 6. Typical Junction Capacitance

25

50

75

100

125

150

175

80

40

120

160

200

0

t

rr

Q

rr

at 5 A, 50 A/µs

at 2 A, 20 A/µs

at 5 A, 50 A/µs

at 2 A, 20 A/µs

at 1 A, 100 A/µs

at 1 A, 100 A/µs

Junction Temperature (°C)

100

10

1

0.1

1

10

100

1000

T

f = 1.0 MHz

V

Reverse Voltage (V)

0.160 (4.06)

0.180 (4.57)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.205 (5.21)

0.220 (5.59)

0 (0)

0.008 (0.2)

0.130 (3.30)

0.155 (3.94)

0.084 (2.13)

0.096 (2.44)

0.077 (1.95)

0.086 (2.20)

Cathode Band

DO-214AA (SMB)

0.085 MAX.

(2.159 MAX.)

0.220 REF

0.086 MIN.

(2.18 MIN.)

0.060 MIN.

(1.52 MIN.)

Mounting Pad Layout