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STL15N3LLH5 Datasheet(PDF) 4 Page - STMicroelectronics |
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STL15N3LLH5 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Electrical characteristics STL15N3LLH5 4/10 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 12.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 7.5 A VGS= 4.5 V, ID= 7.5 A 0.0045 0.006 0.0054 0.0075 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 1500 295 39 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 15 A VGS =4.5 V (see Figure 3) 12 4 4.7 nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV Open drain 0.5 1.5 2.5 Ω |
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