STS8DNH3LL datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STS8DNH3LL

Description	Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8 low gate charge STripFET??III Power MOSFET

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 12 page

Electrical characteristics

STS8DNH3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

µA

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS =Max rating @125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS,ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 4 A

0.018

0.022

Ω

VGS = 4.5 V, ID = 4 A

0.020

0.025

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

Forward

transconductance

VDS = 15 V, ID = 4 A

8.5

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

857

Coss

Output capacitance

147

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 15 V, ID = 8 A,

VGS = 4.5 V

(see Figure 14)

710

Qgs

Gate-source charge

2.5

Qgd

Gate-drain charge

2.3

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