STS9NH3LL datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STS9NH3LL

Description	N-channel 30 V - 0.018 Ω - 9 A - SO-8 low gate charge STripFET??III Power MOSFET

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Electrical characteristics

STS9NH3LL

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating

VDS = Max rating @ 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 4.5 A

VGS= 4.5 V, ID= 4.5 A

0.018

0.020

0.022

0.025

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance

VDS =10 V, ID = 4.5 A

8.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz, VGS=0

857

147

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 15 V, ID = 9 A

VGS = 4.5 V,

(see Figure 16)

7.0

2.5

2.3

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