STW75NF30 datasheet(3/12 Pages) STMICROELECTRONICS

Part #	STW75NF30

Description	N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET??Power MOSFET

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 12 page

STW75NF30

Electrical ratings

3/12

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

300

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

37.8

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

240

Derating factor

2.56

W/°C

dv/dt(2)

ISD ≤ 60A, di/dt ≤ 200A/µs, VDD ≤ 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

PTOT

Total dissipation at TC = 25 °C

320

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.39

°C/W

Rthj-amb

Thermal resistance junction-ambient max

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max. value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

400

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