STW90NF20 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STW90NF20

4/12

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

200

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VDS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 45 A

0.018

0.023

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID = 45 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse Transfer

Capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

5736

1126

196

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS = 0 to 160 V, VGS = 0

687

Intrinsic gate resistance

f = 1 MHz open drain

1.7

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160 V, ID = 83 A,

VGS = 10 V

(see Figure 15)

164

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