10BQ015 datasheet(2/6 Pages) VISHAY

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Document Number: 94110

Revision: 04-Nov-08

10BQ015PbF

Vishay High Power Products Schottky Rectifier, 1.0 A

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

Notes

(1)

thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

VFM (1)

1 A

TJ = 25 °C

0.35

2 A

0.44

1 A

TJ = 125 °C

0.32

2 A

0.40

Maximum reverse leakage current

See fig. 2

IRM (1)

TJ = 25 °C

VR = Rated VR

0.5

TJ = 100 °C

Threshold voltage

VF(TO)

TJ = TJ maximum

-V

Forward slope resistance

-m

Typical junction capacitance

VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C

390

Typical series inductance

Measured lead to lead 5 mm from package body

2.0

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction temperature range

TJ (1)

- 55 to 125

°C

Maximum storage temperature range

TStg

- 55 to 150

Maximum thermal resistance,

junction to lead

RthJL (2)

DC operation

See fig. 4

°C/W

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

Approximate weight

0.10

0.003

oz.

Marking device

Case style SMB (similar to DO-214AA)

V1C

tot

-------------

thJA

--------------

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