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12TTS08 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # 12TTS08
Description  Phase Control SCR, 12.5 A
PDF  7 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

12TTS08 Datasheet(HTML) 2 Page - Vishay Siliconix

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www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93694
2
Revision: 02-Jun-08
12TTS08 High Voltage Series
Vishay High Power Products Phase Control SCR, 12.5 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
IT(AV)
TC = 108 °C, 180° conduction, half sine wave
8
A
Maximum RMS on-state current
IT(RMS)
12.5
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
120
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
140
Maximum I2t for fusing
I2t
10 ms sine pulse, rated VRRM applied, TJ = 125 °C
72
A2s
10 ms sine pulse, no voltage reapplied, TJ = 125 °C
100
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C
1000
A2
√s
Maximum on-state voltage drop
VTM
8 A, TJ = 25 °C
1.2
V
On-state slope resistance
rt
TJ = 125 °C
16.2
m
Ω
Threshold voltage
VT(TO)
0.87
V
Maximum reverse and direct leakage current
IRM/IDM
TJ = 25 °C
VR = Rated VRRM/VDRM
0.05
mA
TJ = 125 °C
1.0
Typical holding current
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
30
Maximum latching current
IL
Anode supply = 6 V, resistive load
50
Maximum rate of rise of off-state voltage
dV/dt
TJ = 25 °C
150
V/µs
Maximum rate of rise of turned-on current
dI/dt
100
A/µs
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
8.0
W
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum required DC gate current to trigger
IGT
Anode supply = 6 V, resistive load, TJ = - 65 °C
20
mA
Anode supply = 6 V, resistive load, TJ = 25 °C
15
Anode supply = 6 V, resistive load, TJ = 125 °C
10
Maximum required DC gate
voltage to trigger
VGT
Anode supply = 6 V, resistive load, TJ = - 65 °C
1.2
V
Anode supply = 6 V, resistive load, TJ = 25 °C
1
Anode supply = 6 V, resistive load, TJ = 125 °C
0.7
Maximum DC gate voltage not to trigger
VGD
TJ = 125 °C, VDRM = Rated value
0.2
Maximum DC gate current not to trigger
IGD
0.1
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical turn-on time
tgt
TJ = 25 °C
0.8
µs
Typical reverse recovery time
trr
TJ = 125 °C
3
Typical turn-off time
tq
100



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