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2SC6144 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC6144
Description  NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6144 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC6144
No. A1149-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
10
μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
10
μA
DC Current Gain
hFE
VCE=2V, IC=270mA
200
560
Gain-Bandwidth Product
fT
VCE=10V, IC=3A
330
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=300mA
180
360
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=6A, IB=300mA
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100μA, IE=0A
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=100μA, IC=0A
5
V
Turn-ON Time
ton
See specified Test Circuit.
62
ns
Storage Time
tstg
See specified Test Circuit.
350
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7508-002
10.0
3.2
4.5
2.8
1.6
1.2
0.7
0.75
2.55
2.55
12
3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
VR
RB
VCC=20V
IC=20IB1= --20IB2=5A
VBE= --5V
++
50
Ω
INPUT
OUTPUT
RL
470
μF
100
μF
PW=20
μs
IB1
D.C.
≤1%
IB2
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
IT13454
05
234
1
0
1
7
6
5
4
3
2
8
9
10
IB=0mA
5mA
30mA
40m
A
45mA
50mA
60
m
A
10mA
20mA
25mA
35mA
15mA
IT13455
0
2.0
1.0
1.5
0.5
0
0.5
3.5
3.0
2.5
2.0
1.5
1.0
4.0
4.5
5.0
IB=0mA
2mA
12mA
16m
A
18m
A
20m
A
4mA
8mA
14mA
6mA
30m
A
10mA



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