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ECH8653 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ECH8653
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8653 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ECH8653
No. A0851-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=4A, VGS=8V
9
14
20
mΩ
RDS(on)2
ID=4A, VGS=4V
11
18
25
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
1280
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
170
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
105
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
13
ns
Rise Time
tr
See specified Test Circuit.
48
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
94
ns
Fall Time
tf
See specified Test Circuit.
36
ns
Total Gate Charge
Qg
VDS=10V, VGS=8V, ID=7.5A
18.5
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=8V, ID=7.5A
2.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=8V, ID=7.5A
3.1
nC
Diode Forward Voltage
VSD
IS=7.5A, VGS=0V
0.82
1.2
V
Package Dimensions
Electrical Connection
unit : mm (typ)
7011A-003
Switching Time Test Circuit
PW=10µs
D.C.≤1%
P.G
50Ω
G
S
D
ID=4A
RL=2.5Ω
VDD=10V
VOUT
ECH8653
VIN
8V
0V
VIN
876
5
123
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
1
4
85
0.15
0 to 0.02
0.65
2.9
0.3
Top View
Bottom View



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