Document Number: 91232

www.vishay.com

S-Pending-Rev. b, 26-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFP450N, SiHFP450N

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully

Characterized

Capacitance

and

Avalanche Voltage and Current

• Lead (Pb)-free

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge and Full Bridge

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

500

0.37

77

26

34

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

RoHS

COMPLIANT

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP450NPbF

SiHFP450N-E3

SnPb

IRFP450N

SiHFP450N

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

14

A

8.8

56

Linear Derating Factor

1.6

W/°C

170

mJ

14

A

20

mJ

Maximum Power Dissipation

200

W

dV/dt

5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m