Document Number: 91232

www.vishay.com

S-Pending-Rev. b, 26-Jun-08

7

IRFP450N, SiHFP450N

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91232.

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

G

• Driver same type as D.U.T.

• D.U.T. - device under test

D.U.T

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer