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MBRF1090CT Datasheet(PDF) 1 Page - Vishay Siliconix

Part # MBRF1090CT
Description  Dual Common-Cathode High-Voltage Schottky Rectifier
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

MBRF1090CT Datasheet(HTML) 1 Page - Vishay Siliconix

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MBRF1090CT & MBRF10100CT
Vishay General Semiconductor
Document Number: 88681
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
freewheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: ITO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A x 2
VRRM
90 V, 100 V
IFSM
120 A
VF
0.75 V
TJ max.
150 °C
ITO-220AB
PIN 2
PIN 1
PIN 3
1
2
3
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
MBRF10100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 105 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
120
A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage
from terminal to heatsink with t = 1 min
VAC
1500
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBRF1090CT
MBRF10100CT
UNIT
Maximum instantaneous forward voltage
per diode (1)
IF = 5.0 A
IF = 5.0 A
TC = 125 °C
TC = 25 °C
VF
0.75
0.85
V
Maximum reverse current per diode at
working peak reverse voltage (1)
TJ = 25 °C
TJ = 100 °C
IR
100
6.0
µA
mA


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