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BFR92AR Datasheet(PDF) 2 Page - Vishay Siliconix

Part # BFR92AR
Description  Silicon NPN Planar RF Transistor
PDF  10 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BFR92AR Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85033
Rev. 1.5, 08-Sep-08
BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35
μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
2V
Collector current
IC
30
mA
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
RthJA
450
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter cut-off current
VCE = 20 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 2 V, IC = 0
IEBO
10
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
15
V
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
hFE
65
100
150
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 10 V, IC = 14 mA,
f = 500 MHz
fT
6GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.3
pF
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
0.15
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.65
pF
Noise figure
VCE = 10 V, IC = 2 mA,
ZS = 50 Ω, f = 800 MHz
F1.8
dB
Power gain
VCE = 10 V, ZS = 50 Ω,
ZL = ZLopt, IC = 14 mA,
f = 800 MHz
Gpe
16
dB
Linear output voltage - two tone
intermodulation test
VCE = 10 V, IC = 14 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2
120
mV
Third order intercept point
VCE = 10 V, IC = 14 mA,
f = 800 MHz
IP3
24
dBm



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