BAS170WS-V datasheet(2/4 Pages) VISHAY

2 / 4 page

www.vishay.com

Document Number 85653

Rev. 1.6, 02-Jul-07

BAS170WS-V

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Note:

1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Note:

1) Pulse test; t

p ≤ 300 µs

Package Dimensions in millimeters (inches): SOD323

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air1)

RthJA

650

K/W

Junction temperature

125

°C

Operating temperature range

Tamb

- 65 to + 125

°C

Storage temperature range

Tstg

- 65 to + 125

°C

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Reverse breakdown voltage

IR = 10 µA (pulsed)

V(BR)

Leakage current

VR = 50 V

0.1

µA

VR = 70 V

µA

Forward voltage

IF = 1 mA

375

410

IF = 10 mA

705

750

Forward voltage1)

IF = 15 mA

880

1000

Diode capacitance

VR = 0 V, f = 1 MHz

1.5

Differential forward resistance

IE = 5 mA, f = 10 kHz

17443

BAS170WS-V Datasheet(PDF) 2 Page - Vishay Siliconix

BAS170WS-V Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Datasheet Download

Link URL