BF979

Document Number 85006

Rev. 1.5, 05-Sep-08

Vishay Semiconductors

www.vishay.com

1

1

3

2

13623

Electrostatic sensitive device.

Observe precautions for handling.

Not for new design, this product will be obsoleted soon

Silicon PNP Planar RF Transistor

Features

• High cross modulation performance

• High power gain

•Low noise

• High reverse attenuation

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

UHF/VHF uncontrolled prestages with low noise and

low modulation.

Mechanical Data

Case: TO-50 Plastic case

Weight: approx. 111 mg

Marking: BF970

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

Maximum Thermal Resistance

μm Cu

Electrical DC Characteristics

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

20

V

Collector-emitter voltage

20

V

Emitter-base voltage

3V

Collector current

50

mA

Total power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

- 55 to + 150

°C

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

1)

300

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector cut-off current

100

μA

Collector-base cut-off current

100

nA

Emitter-base cut-off current

10

μA

Collector-emitter breakdown

voltage

20

V

20

50

90

e3