New Product

SS8P2CL & SS8P3CL

Vishay General Semiconductor

Document Number: 89030

Revision: 30-Jul-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

• Halogen-free

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94V-0 flammability

rating.

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC-Q101 qualified)

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

Base P/NHM3 - halogen-free and RoHS compliant,

high reliability/automotive grade (AEC-Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 and M3 suffix meets JESD 201 class 1A whisker

test, HE3 and HM3 suffix meets JESD 201 class 2

whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling,

dc-to-dc

converters,

and

polarity

protection applications.

PRIMARY CHARACTERISTICS

2 x 4.0 A

20 V, 30 V

120 A

20 mJ

0.41 V

150 °C

TO-277A (SMPC)

K

2

1

Anode 1

Anode 2

Cathode

K

PARAMETER

SYMBOL

SS8P2CL

SS8P3CL

UNIT

Device marking code

S82CL

S83CL

Maximum repetitive peak reverse voltage

20

30

V

Maximum average forward rectified current (Fig. 1)

total device

per diode

8.0

4.0

A

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load per diode

120

A

20

mJ

Operating junction and storage temperature range

- 55 to + 150

°C