GSIB620 thru GSIB680

Vishay General Semiconductor

Document Number: 88648

Revision: 31-Jan-08

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3

PACKAGE OUTLINE DIMENSIONS in millimeters

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

0.3

1.1

0.01

10

0.1

1

100

0.5

0.7

0.9

Instantaneous Forward Voltage (V)

T

T

T

0.4

1.2

0.6

0.8

1.0

1000

20

60

40

100

80

0.01

0.1

1

10

100

T

T

T

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance

0.1

1

10

100

10

100

1000

1

Reverse Voltage (V)

0.01

0.1

1

10

100

0.1

10

100

t - Heating Time (s)

1

2.5 ± 0.2

2.2 ± 0.2

1 ± 0.1

10 ± 0.2

7.5

± 0.2

2.7 ± 0.2

0.7 ± 0.1

4.6 ± 0.2

3.6 ± 0.2

+

7.5

± 0.2

30 ± 0.3

Case Style GSIB-5S