New Product

GSIB2020 thru GSIB2080

Vishay General Semiconductor

Document Number: 88645

Revision: 31-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

PACKAGE OUTLINE DIMENSIONS in millimeters

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

0.6

1.0

1.2

1.4

0.8

0.01

0.1

10

1

100

Instantaneous Forward Voltage (V)

040

60

20

100

80

0.1

1

100

10

1000

Percent of Rated Peak Reverse Voltage (%)

T

T

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance

10

1

100

1000

1

10

100

Reverse Voltage (V)

10

1

0.1

0.1

10

1

0.01

t - Heating Time (s)

2.5 ± 0.2

2.2 ± 0.2

1 ± 0.1

10 ± 0.2

7.5

± 0.2

2.7 ± 0.2

0.7 ± 0.1

4.6 ± 0.2

3.6 ± 0.2

+

7.5

± 0.2

30 ± 0.3

Case Style GSIB-5S