SFH640 datasheet(2/7 Pages) VISHAY

2 / 7 page

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83682

Rev. 1.3, 01-Dec-05

SFH640

Vishay Semiconductors

Optocoupler, Phototransistor Output,

with Base Connection, 300 V BVCEO

Notes

(1) Tamb = 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Note

Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

COUPLER

Isolation test voltage

between emitter and detector, refer to

climate DIN 40046, part 2, Nov. 74

VISO

5300/7500

VRMS/VPK

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Insulation thickness between emitter

and detector

≥ 0.4

Creepage distance

≥ 7mm

Clearance distance

≥ 7mm

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

CTI

175

Storage temperature range

Tstg

- 55 to + 150

°C

Operating temperature range

Tamb

- 55 to + 100

°C

Soldering temperature (2)

max. 10 s, dip soldering:

distance to seating plane

≥ 1.5 mm

Tsld

260

°C

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

1.1

1.5

Reverse voltage

IR = 10 µA

6.0

Reverse current

VR = 6.0 V

0.01

µA

Capacitance

VF = 0 V, f = 1.0 MHz

Thermal resistance

Rthja

750

K/W

OUTPUT

Collector emitter breakdown

voltage

ICE = 1.0 mA,

RBE = 1.0 MΩ

BVCER

300

Voltage emitter base

IEB = 10 µA

BVBEO

7.0

Collector emitter capacitance

VCE = 10 V, f = 1.0 MHz

CCE

7.0

Collector base capacitance

VCB = 10 V, f = 1.0 MHz

CCB

8.0

Emitter base capacitance

VEB = 5.0 V, f = 1.0 MHz

CEB

Thermal resistance

Rthja

250

K/W

COUPLER

Coupling capacitance

0.6

Saturation voltage collector

emitter

IF = 10 mA, IC = 2.0 mA

SFH640-1

VCEsat

0.25

0.4

IF = 10 mA, IC = 3.2 mA

SFH640-2

VCEsat

0.25

0.4

IF = 10 mA, IC = 5.0 mA

SFH640-3

VCEsat

0.25

0.4

Collector emitter leakage

current

VCE = 200 V,

RBE = 1.0 MΩ

ICER

1.0

100

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

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