MBR30H35PT thru MBR30H60PT

Vishay General Semiconductor

Document Number: 88792

Revision: 19-May-08

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

0.01

0.1

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

1

10

100

MBR30H35PT - MBR30H45PT

MBR30H50PT - MBR30H60PT

T

T

T

Instantaneous Forward Voltage (V)

60

40

20

0

100

80

0.0001

0.001

0.1

0.01

1

10

100

MBR30H35PT - MBR30H45PT

MBR30H50PT - MBR30H60PT

Percent of Rated Peak Reverse Voltage (%)

T

T

T

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

0.1

1

100

10

1000

100

10 000

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

0.1

1

1

10

10

t - Pulse Duration (s)

PIN 1

PIN 3

CASE

PIN 2

TO-247AD (TO-3P)

0.245 (6.2)

0.225 (5.7)

0.645 (16.4)

0.625 (15.9)

0.323 (8.2)

0.313 (7.9)

0.142 (3.6)

0.138 (3.5)

0.170

(4.3)

0.086 (2.18)

0.076 (1.93)

0.160 (4.1)

0.140 (3.5)

0.225 (5.7)

0.205 (5.2)

0.127 (3.22)

0.117 (2.97)

0.048 (1.22)

0.044 (1.12)

0.795 (20.2)

0.775 (19.6)

0.840 (21.3)

0.820 (20.8)

1

2

3

0.078 (1.98) REF.

0.203 (5.16)

0.193 (4.90)

10° TYP.

Both Sides

30°

10

1° REF.

Both Sides

0.030 (0.76)

0.020 (0.51)

0.118 (3.0)

0.108 (2.7)