| Electronic Components Datasheet Search |
|
MBRF30H150CT Datasheet(PDF) 3 Page - Vishay Siliconix |
|
|
|||||||||||||||||||||||||||||
MBRF30H150CT Datasheet(HTML) 3 Page - Vishay Siliconix |
|
3 / 5 page ![]() MBR30H150CT, MBRF30H150CT & SB30H150CT-1 Vishay General Semiconductor Document Number: 88865 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode 0.1 0.3 0.2 0.4 0.6 0.8 1.0 0.5 0.7 0.9 1.1 1.2 100 10 0.1 1 T J = 125 °C T J = 175 °C T J = 25 °C T J = 75 °C Instantaneous Forward Voltage (V) 0.1 0.01 1 10 100 1000 10 000 10 20 30 50 70 100 40 60 8090 T J = 175 °C T J = 125 °C T J = 75 °C T J = 25 °C Percent of Rated Peak Reverse Voltage (%) Figure 5. Typical Junction Capacitance Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 10 1 100 100 1000 10 000 0.1 10 Reverse Voltage (V) 0.01 1 100 10 10 100 0.1 0.1 1 MBRF MBR, MBRB t - Pulse Duration (s) |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |