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SBYV26C Datasheet(PDF) 3 Page - Vishay Siliconix |
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SBYV26C Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() SBYV26C Vishay General Semiconductor Document Number: 88735 Revision: 20-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Figure 4. Typical Instantaneous Forward Characteristics Figure 5. Typical Reverse Leakage Characteristics 1 10 100 1 100 10 Number of Cycles at 50 Hz T J = TJ Max. 10 ms Single Half Sine-Wave 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) 0.01 0.1 10 100 1 T J = 165 °C T J = 125 °C T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 020 60 40 100 80 0.01 0.001 0.1 10 1 100 Percent of Rated Peak Reverse Voltage (%) T J = 125 °C T J = 165 °C T J = 25 °C Figure 6. Typical Junction Capacitance Figure 7. Typical Transient Thermal Impedance Reverse Voltage (V) 0.1 1 10 100 100 10 1 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.01 0.1 1 10 100 100 10 1 t - Pulse Duration (s) |
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