BAS19-V datasheet(2/6 Pages) VISHAY

2 / 6 page

www.vishay.com

Document Number 85540

Rev. 1.5, 22-Jul-05

BAS19-V / 20-V / 21-V

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Measured under pulse conditions; Pulse time = T

p ≤ 0.3 ms

2) Device on fiberglass substrate, see layout on next page

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Device on fiberglass substrate, see layout on next page

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

Unit

Continuous reverse voltage

BAS19-V

100

BAS20-V

150

BAS21-V

200

Repetitive peak reverse voltage

BAS19-V

VRRM

120

BAS20-V

VRRM

200

BAS21-V

VRRM

250

Non-repetitive peak forward

current

t = 1

µsI

FSM

2.5

Non-repetitive peak forward

surge current

t = 1 s

IFSM

0.5

Maximum average forward

rectified current

(av. over any 20 ms period)

IF(AV)

2001)

DC forward current

Tamb = 25 °C

2002)

Repetitive peak forward current

IFRM

625

Power dissipation

Tamb = 25 °C

Ptot

2502)

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

RthJA

4301)

°C

Junction temperature

150

°C

Storage temperature range

- 65 to + 150

°C

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 100 mA

1.0

IF = 200 mA

1.25

Leakage current

VR = VRmax

100

VR = VRmax, Tj = 150 °C

100

µA

Dynamic forward resistance

IF = 10 mA

Ω

Diode capacitance

VR = 0, f = 1 MHz

Ctot

5pF

Reverse recovery time

IF = IR = 30 mA, RL = 100 Ω,

Irr = 3 mA

trr

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