BFR92AF

Document Number 85098

Rev. 1.4, 05-Sep-08

Vishay Semiconductors

www.vishay.com

1

2

1

3

Electrostatic sensitive device.

Observe precautions for handling.

16867

Not for new design, this product will be obsoleted soon

Silicon NPN Planar RF Transistor

Description

The main purpose of this bipolar transistor is broad-

band amplification up to 1 GHz. In the space-saving

3-pin surface-mount SOT-490 package electrical per-

formance and reliability are taken to a new level cov-

ering a smaller footprint on PC boards than previous

packages. In addition to space savings, the SOT-490

provides a higher level of reliability than other 3-pin

packages, such as more resistance to moisture. Due

to the short length of its leads the SOT-490 is also

reducing package inductances resulting in some bet-

ter electrical performance. All of these aspects make

this device an ideal choice for demanding RF applica-

tions.

Features

• High power gain

• Low noise figure

• High transition frequency

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

Wide band amplifier up to GHz range.

Mechanical Data

Typ: BFR92AF

Case: SOT-490 Plastic case

Weight: approx. 2.5 mg

Pinning: 1 = Collector, 2 = Base, 3 = Emitter

Parts Table

Absolute Maximum Ratings

Part

Marking

Package

BFR92AF

P2

SOT-490

Parameter

Test condition

Symbol

Value

Unit

Collector-base voltage

20

V

Collector-emitter voltage

15

V

Emitter-base voltage

2V

Collector current

30

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

-65 to +150

°C

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