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THDT58S Datasheet(PDF) 3 Page - STMicroelectronics |
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THDT58S Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() I IF VBO VRM IRM VF V Ipp IH IBO VBR Symbol Parameter VRM Stand-off voltage IRM Leakage current at VRM VBR Breakdown voltage VBO Breakover voltage IH Holding current VF Forward Voltage drop IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) Type IRM @VRM VBR @IR VBO @IBO IH C max. min. max. min. note1 max. min. note 2 max. note 3 µA V V mA V mA mA mA pF THDT58S 10 56 58 1 80 150 800 150 400 THDT58S1 10 56 58 1 80 50 800 150 200 Note 1 : See the reference test circuit 1 for IBO and VBO parameters. Note 2 : See test circuit 2. Note 3 : VR = 1V, F = 1MHz. 2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR Symbol Test conditions Value Unit VF IF = 5 A tp = 500 µs5 V 1 - PARAMETER RELATED TO THE DIODE LINE/GND THDT58S / THDT58S1 3/7 |
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