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TCRT1010 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TCRT1010 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() www.vishay.com 2 Document Number 83752 Rev. 1.6, 04-Sep-06 TCRT1000/TCRT1010 Vishay Semiconductors Input (Emitter) Output (Detector) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Coupler 1) Measured with the ‘Kodak neutral test card", white side with 90% diffuse reflectance 2) Measured without reflecting medium Parameter Test condition Symbol Value Unit Reverse voltage VR 5V Forward current IF 50 mA Forward surge current tp ≤ 10 µs IFSM 3A Power dissipation Tamb ≤ 25 °C PV 100 mW Junction temperature Tj 100 °C Parameter Test condition Symbol Value Unit Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 5V Collector current IC 50 mA Power dissipation Tamb ≤ 25 °C PV 100 mW Junction temperature Tj 100 °C Figure 1. Power Dissipation Limit vs. Ambient Temperature 0 100 200 300 0 95 11071 Tamb - Ambient Temperature (°C) IR - diode Coupled device Phototransistor 25 50 75 100 Parameter Test condition Symbol Min Typ. Max Unit Collector current VCE = 5 V, IF = 20 mA, d = 1 mm (figure 2) IC 1) 0.3 0.5 mA Cross talk current VCE = 5 V, IF = 20 mA (figure 1) ICX 2) 1µA Collector emitter saturation voltage IF = 20 mA, IC = 0.1 mA, d = 1 mm (figure 2) VCEsat 1) 0.3 V |
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