TCST1202 datasheet(3/9 Pages) VISHAY

3 / 9 page

TCST1103/1202/1300/2103/2202/2300

Document Number 83764

Rev. 1.8, 16-Aug-06

Vishay Semiconductors

www.vishay.com

Output (Detector)

Switching Characteristics

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector emitter voltage

IC = 1 mA

VCEO

Emitter collector voltage

IE = 10 µA

VECO

Collector dark current

VCE = 25 V, IF = 0, E = 0

ICEO

100

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Turn-on time

VS = 5 V, IC = 2 mA, RL = 100 Ω

(see figure 1)

ton

10.0

µs

Turn-off time

VS = 5 V, IC = 2 mA, RL = 100 Ω

(see figure 1)

toff

8.0

µs

Figure 1. Test circuit for ton and toff

Figure 2. Switching Times

Channel I

Channel II

95 10890

+ 5 V

IC = 2 mA; adjusted by I

RG = 50 Ω

t p

=0.01

Oscilloscope

1 M

L ≥

CL ≤ 20 pF

100

= 50 µs

10 %

90 %

100 %

ton

toff

96 11698

pulse duration

delay time

rise time

ton (=t + t )

turn-on time

storage time

fall time

toff (= ts +tf)turn-off time

Figure 3. Power Dissipation Limit vs. Ambient Temperature

100

200

300

400

95 11088

Tamb - Ambient Temperature (°C)

Coupled device

Phototransistor

IR - diode

150

120

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