TMBYV10-40FILM datasheet(2/4 Pages) STMICROELECTRONICS

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Test Conditions

Min.

Typ.

Max.

Unit

IR*

Tj = 25

°C

VR = VRRM

0.5

Tj = 100

°C

VF*IF = 1A

Tj = 25

°C

0.55

IF = 3A

0.85

* * Pulse test: tp

≤ 300µs δ < 2%.

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Tj = 25

°C

VR = 0

220

DYNAMIC CHARACTERISTICS

Forward current flow in a Schottky rectifier is due

to majority carrier conduction. So reverse recovery

is not affected by storage charge as in conventional

PN junction diodes.

Nevertheless, when the device switches from for-

ward biased condition to reverse blocking state,

current is required to charge the depletion capaci-

tance of the diode.

This current depends only of diode capacitance and

external circuit impedance. Satisfactory circuit be-

haviour analysis may be performed assuming that

Schottky rectifier consists of an ideal diode in par-

allel with a variable capacitance equal to the junc-

tion capacitance (see fig. 5 page 4/4).

Fig. 1 : Forward current versus forward voltage

at low level (typical values).

Fig. 2 : Forward current versus forward voltage

at high level (typical values).

TMBYV10-40

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